Room Temperature Si/Si Wafer Direct Bonding in Air
Wafer direct bonding technique offers flexible and inexpensive ways to fabricate novel semiconductor devices.But its application is much limited by high temperature process and void problem. In this study, room temperature Si/Si wafer direct bonding has been performed using sequential plasma pretreatment prior to bonding. A shorter O2 reactive ion etching (RIE) pretreatment (～10 s) and followed by N2 radicals for 60 s is used for surface activation. Strong bonding strength (about 2～2.5 J/m2) is achieved at room temperature without requiring any annealing process. It is close to the bulk-fracture of silicon.Furthermore, no voids are observed at Si/Si interfaces even if the bonded wafer pairs are heated from 200℃ to 800℃ in subsequent annealing process. The bonding mechanism is proposed in this paper. The authors believe that this voidfree, room temperature bonding technique by sequential plasma activation is suitable for the microelectromechanical systems manufacture process and wafer-scale packaging.
Chenxi Wang Eiji Higurashi Tadatomo Suga
Department of Precision Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo,Bunkyo- Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, T
国际会议
第八届电子封装技术国际会议(2007 8th International Conference on Electronics Packaging Technology ICEPT2007)
上海
英文
552-557
2007-08-14（万方平台首次上网日期，不代表论文的发表时间）