Modeling of the Mechanical Stiffness of the Gap/Gaas Nanowires with Point Defects/Stacking Faults

摘要：

The semiconductor type Ⅲ-V nanowires (e.g.,GaAs,GaP, InAs, InP, etc.) has excellent electronic/optical properties for the application of next-generation nanoscaled transistor, light-emitting diode and bio/chemical sensors. However, the electronic conductance of the nanowire is highly sensitive to the internal stress/stain condition under external loadings. In this paper, the mechanical stiffness of the GaAs and GaP nanowires are simulated, and the trend of the results are validated by the bulk experiments. The mechanical influence of the point defect and the stacking faults are considered. Moreover, an analytical solution is established to describe the mechanical stiffness decreasing of the stacking faults. The simulations indicate that the mechanical stiffness of the nanowire is influenced by the density of the stacking faults and the density of covalent bonds at the twin-dislocation interface.

关键词： Ⅲ-V nano-scaled semiconductors Molecular dynamics calculations Stacking faults mechanical properties

作者: Alex W.Dawotola Cadmus A.Yuan Willem D.van Driel G.Q.(Kouchi) Zhang Erik P.A.M.Bakkers

作者单位: Department of Precision and Microsystem Engineering, Delft University of Technology, Netherlands Philips Research Laboratories, The Netherlands

会议类型: 国际会议

会议名称: 第八届电子封装技术国际会议(2007 8th International Conference on Electronics Packaging Technology ICEPT2007)

会议地点: 上海

会议语种:英文

页码: 566-570

在线出版日期: 2007-08-14（万方平台首次上网日期，不代表论文的发表时间）