Electromigration In Cu/Sn-58Bi/Cu Interconnects
The microstructural changes on the surface of Cu/Sn-58Bi/Cu interconnects, under current stressing of 2.7 ×104A/cm2, 95℃ for 60hrs, are examined in this paper. At the anode side, the Bi phase accumulated in front of the intermetallic compound (IMC), and bumps of Bi rich solder extruded out of the surface along the IMC/solder interface. At the cathode side, a Bi depleted zone appeared, which was composed of Sn rich particles and tiny Bi-rich particles. After grinding and polishing, a continuous Bi layer was observed accumulated in front of the IMC at the anode side, which caused a reliability concern in the solder joints.
Q.L.Yang J.D.Guo J.K.Shang
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Shenyang, China 110 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Shenyang, China 110
国际会议
第八届电子封装技术国际会议(2007 8th International Conference on Electronics Packaging Technology ICEPT2007)
上海
英文
691-693
2007-08-14（万方平台首次上网日期，不代表论文的发表时间）