Backside IR Photon Emission Microscopy (IR-PEM) Observation in Failure Analysis of the Packaged Devices

摘要：

IR Photon Emission Microscopy (IR-PEM) has been widely used in the failure localization of CMOS ICs and its samples include wafer-level samples and packaged devices.For the wafer-level samples, directly observing is possible,while cecapsulation must be implemented for the packaged devices. However, due to an increase of the metal interconnection layers in ICs, it is difficult, if not impossible, to obtain the IR emission image from the frontside of the die.Fortunately, silicon shows good transparency to IR, so it is feasible to get the IR emission image from the backside of the chip, which means backside decapsulation and further thinning the silicon substrate of packaged devices are needed. In this paper, procedures and tools of backside decapsulation will be introduced and the usage of IR-PEM in failure localization of the chips will be revealed.

作者: Jianlei Tao Peiyuan Fang Jiaji Wang

作者单位: Department of Material Science, Fudan University, 220 Handan Road, Shanghai 200433, China

会议类型: 国际会议

会议名称: 第八届电子封装技术国际会议(2007 8th International Conference on Electronics Packaging Technology ICEPT2007)

会议地点: 上海

会议语种:英文

页码: 792-795

在线出版日期: 2007-08-14（万方平台首次上网日期，不代表论文的发表时间）