Self-Compensating Power Supply Circuit for Low Voltage SOI

摘要：

SOI device is promised to be a mobile and wireless network applications as it has better potential of high speed, low operating voltage and Q-factor. Gate Body directly connected SOI MOSFET suppresses Sees historical effects and is promised technologies that let the logic circuitry work in ultra low voltage. Compared to Bulk-Si MOSFET, GBSOI can reduce its power supply voltage by 30％, its current by 26％ and its power dissipation by 47％. However sub-Gbps level clocking circuits with ultra low voltage require the smaller PVT (process, voltage and temperature) variation. This paper presents an architecture to stabilize SOI logic circuitry against PVT variation especially under ultra low power supply voltage. Deviation of gate delay caused by PVT variation is reduced to 1.6％, while 40％ with Bulk-Si. This system realizes the cell libraries whose gate delay is constant despite PVT variation. They greatly help designing circuitry especially under ultra low voltage.

作者: Leona Okamura Fukashi Morishita Katsumi Dosaka Kazutami Arimoto Tsutomu Yoshihara

作者单位: Graduate School of Information,Production and Systems,Waseda University,Fukuoka,Japan System Core Technology Division,Renesas Technology Corp.Itami,Hyogo,Japan

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）