A GIDL-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2

摘要：

A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs has been proposed and implemented into HiSIM2, first complete surface potential based model. The model consists of one tunneling mechanism considering two tunneling currents, band to band tunneling (BTBT) and trap assisted tunneling (TAT), and requires totally 7 model parameters covering all bias conditions. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning. Validity of the model has been tested with a circuit, which is sensitive to the change of the stored charge due to tunneling current.

作者: Ryosuke Inagaki Mitiko Miura-Mattausch Yasuaki Inoue

作者单位: Graduate School of IPS, Waseda University Kita-kyushu, Fukuoka, Japan Semiconductor Technology Acade Advanced Science of Matter, Hiroshima University Higashi-Hiroshima, Hiroshima, Japan Graduate School of IPS, Waseda University Kita-kyushu, Fukuoka, Japan

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）