Simulation of Surface State Effects in the Transient Response of 4H-SiC MESFETs

摘要：

Two-dimensional small-signal ac and transient analyses of surface trap effects in 4H-SiC MESFETs have been performed in this paper. The mechanism of acceptor-type traps on transconductance and drain current changes has been discussed. The simulation results show that transconductance exhibits negative frequency dispersion behavior, which is caused by the charge exchange via the surface states existing between the gate-source and gate-drain terminals. The current degradation behavior is also observed due to acceptor-type traps, acting as electron traps, in MESFET devices. A detailed study about ionization and energy level of traps reveals conclusive results in the devices analyzed.

作者: Deng Xiaochuan Zhang Bo Li Zhaoji Chen ZhuangLiang

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu, China

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）