A Versatile 600V BCD Process for High Voltage Applications

摘要：

A versatile 600V BCD process using thin epitaxial technology has been realized for high voltage applications. High voltage double RESURF LDMOS with the breakdown voltage up to 900V as well as low voltage CMOS and BJT have been achieved using this high voltage BCD process. An experimental half bridge gate drive IC is also successfully implemented, the high side floating offset voltage in the half bridge drive IC is above 850V with a conventional level shifting structure, and the detrimental effect of the high voltage interconnection metal line can be almost ignored using this high voltage BCD process without using additional mask or process. The major features of this process for high voltage applications have been clearly demonstrated.

作者: Ming Qiao Xianda Zhou Xin Zheng Jian Fang Bo Zhang Zhaoji Li

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）