The Total Dose Radiation Hardened MOSFET with Good High-temperatue Performance

摘要：

Total dose radiation hardened partial silicon-on-insulator (PSOI) MOSFET structure is proposed in this paper. Radiation effects of SOI and PSOI MOSFET are discussed and compared. Simulation results show that the subthreshold performance of SOI MOSFET is significantly deteriorated even under low radiation dose. But the total dose radiation tolerance of PSOI MOSFET is superior to its conventional SOI counterpart under the same radiation dose. Additionally, the influence of transistors physical parameters on total dose radiation is analyzed. The tolerance is enhanced with the increase of the PSOI silicon window length when the devices are under high total dose conditions. Furthermore, PSOI MOSFET performs better than that of SOI MOSFET at high temperature under harsh radiation condition.

作者: Jianbing Cheng Bo Zhang Zhaoji Li

作者单位: Department of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu, Sichuan Province, China

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）