Novel SJ-LDMOS on SOI with Step Doping Surface-Implanted Layer

摘要：

A super-junction (SJ) SOI-LDMOS with step doping surface-implanted n-type layer is proposed and optimized which allows high breakdown voltage (BV) and low on-resistance (Ron). The proposed structure overcomes the field effect action in conventional SJ SOI-LDMOS devices thus achieving the charge compensation between the n and p pillars as well as a near uniform electric field distribution in the drift region in the off-state. The surface-implanted layer also provides a low current path in the on-state. The simulation results show that an increase in the off-state BV by 55％ and a reduction of the specific on-resistance by 37.4％ are obtained for the proposed device when compared with those of the conventional one.

作者: Wanjun Chen Bo Zhang Zhaoji Li

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan P.R.China, 610054

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）