A new two dimensional analytical breakdown model of SOI RESURF devices

摘要：

In this paper, a new breakdown model of SOI RESURF devices is proposed based on solving 2-D Poisson equation. The approach explores the physical insights of the lateral and vertical breakdowns for both of the completely and incompletely depleted drift regions. Analytical 2-D electrostatic potential and electric fields distributions are compared with the simulating results by MEDICI, The impacts of the geometry parameters on the breakdown voltage are also investigated by the analytical model and numerical simulation. A well agreement between the analytical and simulating results proofs the availability of the model. Finally, as a further experimental verification, LDMOS with a breakdown voltage of 220V was fabricated on a bonding SOI wafer with a top silicon thickness of 3.0μm and a buried oxide thickness of 1.5μm.

作者: Yufeng Guo Zhaoji Li Bo Zhang

作者单位: College of Optoelectronic Engineering Nanjing University of Posts and Telecommunications, Nanjing, J Center of IC Design University of Electronic Science and Technology of China, Chengdu, Sichuan, 6100

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）