Analytical Model for the Surface Electrical field Distributions of Double RESURF Devices with Gaussian-doped P-top Region

摘要：

In this paper, an analytical model for the surface electrical field distributions of double RESURF devices with Gaussian-doped P-top region is presented. Based on the 2-D Poissons solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias; the dependence of breakdown voltage on drift region length and thickness is calculated. An effectual way to gain the optimum high-voltage devices is also proposed. All analytical results are well verified by simulation results obtained by MEDICI and previous experimental data, showing the validity of the model presented here.

作者: Qi Li Zhaoji Li Bo Zhang

作者单位: IC Design Center, University of Electronic Science & Technology, Chengdu Sichuan Province, China

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）