CARRIER TRANSPORT MECHANISM IN THIN FILM SILICON/CRYSTALLINE SILICON HETERO-JUNCTION SOLAR CELLS

摘要：

The dark I-V-T characteristics were measured between the temperature of 273K and 333K. The experimental data indicate that besides the recombination mechanism, the tunneling process also exists for the n-type nano-crystalline silicon (n nc-Si)/p type crystalline silicon (p c-Si) hetero-junction solar cells with an epitaxy intrinsic buffer layer. Tunneling through the interface states is the main transport mechanism in the voltage of 0.3~0.5V.

作者: F.Liu J.Cui Q.Zhang M.Zhu Y.Zhou

作者单位: Department of physics, Graduate University of Chinese Academy of Sciences, P.O.Box 4588, Beijing, 100049, China

会议类型: 国际会议

会议名称: 2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)

会议地点: 北京

会议语种:英文

在线出版日期: 2007-09-18（万方平台首次上网日期，不代表论文的发表时间）