EFFECT OF GAINP LATTICE MICROSTRUCTURE ON THE ALGAAS/GAINP TUNNELING DIODE IN GAINP/GAAS/GE TRIPLE-JUNCTION SOLAR CELL

摘要：

A numerical simulation was carried out to study the effect of sublattice ordering on the AlGaAs/GaInP2 wide band gap tunneling diode. The self-consistent solution of heterojunction Poisson equation and Schrodinger equation was calculated to give the band profile of a GaInP/GaAs tandem solar cell.

作者: Wei Zhang Mengyan Zhang Mingbo Chen Depeng Jiang Liangxing Wang

作者单位: Shanghai Institute of Space Power-Sources, Shanghai, 200233, P.R.China

会议类型: 国际会议

会议名称: 2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)

会议地点: 北京

会议语种:英文

在线出版日期: 2007-09-18（万方平台首次上网日期，不代表论文的发表时间）