INFLUENCES OF THE SELENIZATION DURATION ON COMPOSITIONS AND MICROSTRUCTURES OF CIGS ABSORBER

摘要：

The CIGS film is prepared by two-stage process, that is magnetron sputtering and solid Se source selenization process, Se element diffuses in CIG precursors at a speed, and the diffusion constant is 6.3×10-11cm2/s at a substrate temperature of 610℃, the selezation duration should be controlled in 15 minutes, if not the Cu content is superfluous, and CuSe compound is left on the surface of CIGS films, the diameter of CIGS grain can reach 2μm at 15 min, and then the surface of film turns ruleless.

作者: LI Qiufang Zhuang Daming Zhang Gong Li Chunlei Song Jun

作者单位: Department of Mechanical Engineering, Tsinghua University Beijing 100084, China

会议类型: 国际会议

会议名称: 2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)

会议地点: 北京

会议语种:英文

在线出版日期: 2007-09-18（万方平台首次上网日期，不代表论文的发表时间）