INVESTIGATION OF SELF-ORGANIZED QUANTUM DOTS IN INGAN ALLOYS FOR PHOTOVOLTAIC DEVICES
The self-organized quantum dots in InGaN alloys grown by metal organic chemical vapor deposition for photovoltaic devices were investigated using photoluminescence spectra, x-ray diffraction and atomic force microscopy measurements. The AFM view of the alloy shows the island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. By analysis of the PL, it has been found that the narrow 493nm emission peak with 490nm and 487nm shoulder peaks was originated from InGaN self-organized quantum dots, which provide a candidate for realizing high efficiencies photovoltaic devices.
Yuan Jinshe Wang Mingyue
Department of physics,Chongqing Normal University 12 Tianchen Road,Shapingba,Chongqing 400047, China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18(万方平台首次上网日期,不代表论文的发表时间)