NOVEL MATERIALS AND STRUCTURES FOR SUPER HIGH EFFICIENCY MULTI-JUNCTION SOLAR CELLS
III-V compound multi-junction solar cells have great potential for space and terrestrial applications because they have high efficiency potential of more than 50％ and superior radiation-resistance. As a result of developing wide bandgap InGaP double hetero structure tunnel junction for sub-cell interconnection, InGaAs middle cell lattice-matched to Ge substrate, and InGaP-Ge heteroface structure bottom cell, we have demonstrated 38.9％ efficiency at 489-suns AM1.5 with InGaP/InGaP/Ge 3-junction solar cells In order to realize 40％ and 50％ efficiency, new approaches for novel materials and structures are being studied. We have obtained promising results: 1) high quality (In)GaAsN material with higher mobility by chemical beam epitaxy compared to those grown by the other growth methods, 2) 11.27％ efficiency InGaAsN single-junction cells for 4-and 5-junction applications.
Masafumi Yamaguchi Hidetoshi Suzuki Ken-ichi Nishimura Nobuaki Kojima Yoshio Ohsita Yoshitaka Okada
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan *University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）