THE INFLUENCE OF NH4F ON SILICON ETCHING IN HF/HNO3/H2O SYSTEM

摘要：

The HF/HNO3/H2O system is wildly used in micro-electronics process and texturing for solar cells. The silicon etching process in this system is very complicated and the etching mechanism is correlated with mixture ratio of this solution system. By changing the mixture ratio, controlling reaction temperature and adding appropriate additive, silicon etching rate could be controlled effectively. The influence of a new additive NH4F on silicon etching in this system had been mainly studied in this paper. We measured the silicon etching rate changed along with the quantity of the additive, took the scanning electron microscope (SEM) picture of the etched silicon surface, and gauged surface reflectivity. In the end, we analyzed the influence of this additive on the basis of the measuring result.

作者: Jing An Yang Shi Zhiguang Liu Rongqiang Cui Jingxiao Wang Jianhua Huang Xiang Li Chunjian Wu Jiabin Du

作者单位: Tietun Sun, Tian Chen, Jianqiang Wang, Xiuqin Xu Solar Energy Institute of Shanghai Jiao Tong Univer SJTU-Solarfun Photovoltaic Research&Development Center Humin Road 1871# Shanghai 201109, China SJTU-LDK Solar Energy Joint Lab Shanghai 200240, China

会议类型: 国际会议

会议名称: 2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)

会议地点: 北京

会议语种:英文

在线出版日期: 2007-09-18（万方平台首次上网日期，不代表论文的发表时间）