HIGH QUALITY CdZnTe (100)/Si CRYSTAL FILMS GROWN BY HWE
Cd1-xZnxTe(CZT) is a perfect compound substrate for infrared detector fabrication, and is prepared by “double source evaporation method with the hot wall epitaxy(HWE) equipment in this paper. Cd0.96Zn0.04Te and Zn are used as double source and put in the different sites with different temperatures in the epitaxing process. In this paper, high quality Cd1-xZnxTe/Si can be prepared on cheaper substrate (silicon) by HWE. High-quality Cd1-xZnxTe /Si thin film compound substrates with mirror-like surface are prepared with the optimized growth conditions, and its structural performance are tested by XRD and SEM. Among all the results, profile morphology analysis for a mirror-like surface sample by SEM confirms that columnar growth with the CdZnTe (100) orientation is achieved during the film growth, which is a main breakthrough in the hot wall epitaxy method.
Yehua Tang Yunkun Yin Tingjin Chen
Yunnan Tian Da Photo-voltaic Tech Limited Company No.2, Hongwai Road, Kunming 650092,Yunnan,China Solar Energy Research Institute,Yunnan Normal University Kunming 650092,Yunnan,China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）