A STUDY OF Al/Ti, Al/Ni/Cr AND Al/Mo OHMIC CONTACTS TO INDIUM TIN OXIDE (ITO) FOR APPLICATION IN THIN FILM SOLAR CELL
In order to obtain a suitable ohmic contacting material for chalcopyrite Cu(In1-xGax) (Se1-ySy)2 based solar cells transparent conductive oxide indium tin oxide(ITO) (600 nm) deposited on soda lime glass, its optical and electrical properties was optimized by annealing at 400℃ in the atmosphere of N2. The Al(280 nm)/Mo (20 nm), Al(155 nm)/Ni(25 nm)/Cr(15 nm) and Al(275 nm)/Ti(15 nm) metal pads deposited by e-beam onto ITO. The contact resistance between the metal pads and ITO has been studied for different annealing temperature. It has been found that Al/Mo contacting structure has lower resistance and is more suitable for solar cell technology.
Mohammadi Gheidari E.Asl Soleimani
Thin Film Laboratory, ECE Department, University of Tehran, North Kargar Ave, P.O.Box 14395/515, Tehran, Iran
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）