BORON DIFFUSION OF THE SILICON SOLAR CELL WITH BBr3
(0) Boron diffusion for the passivation of silicon solar cell is a crucial element of high efficiency solar cells. Comparing with the traditional screen-printed aluminum back surface field (Al-BSF), boron diffusion back surface field has its advantage on improving the surface passivation of silicon solar cell and increasing the effective minority carrier lifetime. For traditional P-type solar cells, the silicon material is becoming less and less. However, the N-type silicon material as a substitute is noticeable. For N-type silicon material, the pn junction is directly formed by boron diffusion. In this paper, comparing with spin-on diffusion method, we mainly focus on the boron diffusion with BBr3. Diffusion temperature, N2 volume and diffusion time etc. elements have the remarkable influence on the number and equality of the sheet resistance, junction depth etc. of the silicon solar cell after boron-diffusion. Masked boron diffusion, one-side erode after boron diffusion also improve the solar cell manufacture technique a lot.
Le Yang Jing Yang Xin Fang Yang Shi Jingxiao Wang Qinghao Ye Jianhua Huang Xiang Li Chunjian Wu
Shanghai Jiaotong University Solar Energy Institute Shanghai 200240, China SJTU-Solarfun PV R&D Center Shanghai 201109, China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）