THE INVESTIGATION OF Al-BSF PASSIVATION QUALITY
The screen-printed Al-back surface field (Al-BSF) is widely used to passivate the back surface of silicon solar cells. In order to increase the cost-effectiveness of solar cells, there is a strong trend to further reduce the wafer thickness down to at least 200μm. So the back surface recombination velocity (Sb) begins to strong influence solar cells performance when the minority carrier diffusion length approaches or exceeds device thickness. Al-BSF which can decrease Sb becomes much more important. Previously, most researchers utilized solar cell internal quantum efficiency (IQE) to analysis the quality of Al-BSF. But this method is could not characterize Al-BSF directly because of other factors. In this paper, the back-surface fields is formed using screen-printed Al layer on Cz P-type silicon directly followed sintering in belt furnace and we measure the minority carrier lifetime after firing. Through theoretical calculation of the surface recombination velocity, it helps us to analysis Al-BSF passivation quality directly and effectively.
Chen Tian Jiabin Du Rongqiang Cui Meizhen Huang Jianqiang Wang Jing An Jingxiao Wang Jianhua Huang Xiang Li Chunjian Wu
Solar Energy Institute of Shanghai Jiao Tong University Dongchuan Road 800# Shanghai 200240, China SJTU-LDK Solar Energy Joint Lab Shanghai 200240, China SJTU-Solarfun Photovoltaic Research&Development Center Humin Road 1871# Shanghai 201109, China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）