SIMULATION AND OPTIMIZATION OF a-Si:H/c-Si HETERO-JUNCTION SOLAR CELLS
A-Si:H/c-Si hetero-junctions are attracting considerable interests due to their performance among HIT solar cells. Many advantages such as low temperature deposition leading to low-thermal budget, high open-circuit voltage values and less efficiency drop with increased operation temperature are observed in this structure. In this paper, the design and optimization of a-Si:H/c-Si hetero-junction devices utilizing a newly introduced numerical simulation program AFORS-HET v2.2 is demonstrated. A model of an TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells is built and fully simulated. Furthermore, as the solar cell performance critically depends on the a-Si:H/c-Si interface properties, the influence of the interface state density Nit on various characterization techniques is investigated. Additionally, an optimization of multi-dimensional parameter including layer thicknesse and doping concentration has been implemented to obtain the maximum solar cell efficiency.
Peng Gang Wang Xiaojing Tang Pengju Zhou Wenli Yu Jun
Huazhong University of Science & Technology
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）