ELECTRICAL CHARACTERIZATION AND MEASUREMENTS OF SiN THIN FILMS ON CRYSTALLINE SILICON SUBSTRATES BY PECVD
In this work silicon nitride (SiN) films were deposited on p-type mono-crystalline silicon substrates using SiH4/NH3 by plasma enhanced chemical vapour deposition (PECVD). The SiN films on silicon substrate have better surface passivation properties and better anti-reflection than the other material films. Later, these samples with the SiN film were prepared under different annealing conditions. Finally, we want to fully understand hydrogen behavior during deposition and following annealing, meanwhile, the effective carrier lifetimeτeff and the other electrical property of these samples with the SiN film were compared and contrasted with before and after annealing, these were also our focal point in this topic. The characterization and the electrical property of the sample were measured using Quasi-steady State Photoconductance Decay (QSSPCD), Spectral ellipsometry, Fourier-transform infrared spectroscopy (FTIR), The high-frequency 1MHz capacitance-voltage (C-V). This topic is mainly covered with the characterization measurements of thin film, including the effect characterization measurement of SiN on crystalline silicon solar cell. All rights reserved.
Bingyan Ren Bei Guo Yan Zhang Bing Zhang Hongyuan Li Xudong Li
School of Material Science and Engineering, Hebei University of Technology, 300130,Tian Jin, China; School of Material Science and Engineering, Hebei University of Technology, 300130,Tian Jin, China; Beijing Solar Energy Research Institute, 3# HuaYuan Road, HaiDian District Beijing 100083, China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）