RESEARCH ON SURFACE PASSIVATION OF TiO2 AND SiO2 THIN FILMS FOR CZ SILICON WAFERS

摘要：

Surface passivation has become the key issues for mass production of crystalline silicon solar cells, and it is the surface passivation that is the most important mean to improve the crystalline silicon solar cells efficiency. In this paper, the mechanisms and methods of surface passivation of thin film for CZ silicon wafers were briefly introduced and investigated by titanium dioxide and thermal oxides, which were deposited by thermal oxidation and spraying using N2 and tetraisopropyl titanate as precursors. The minority carrier lifetime of samples was measured by Quasi-Steady-State Photoconductance Decay (QSSPCD). On the base of measured results, we can get a conclusion that thermal oxidation is excellent for surface passivation, and there is no passivation on the surface of CZ silicon for TiO2 thin film.

作者: Bingyan Ren Bing Zhang Bei Guo Yan Zhang Hongyuan Li Xudong Li

作者单位: School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China Be Beijing Solar Energy Research Institute, 3# HuaYuan Road, HaiDian District Beijing 100083, China

会议类型: 国际会议

会议名称: 2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)

会议地点: 北京

会议语种:英文

在线出版日期: 2007-09-18（万方平台首次上网日期，不代表论文的发表时间）