AMPS MODELING OF INTERFACES INFLUENCE IN A-Si NIP SOLAR CELLS
This paper reports numerical simulation for the impacts of interfaces at ITO/p, p/i and n/metal on the performances of a-Si solar cells, using Analysis of Microelectronic and Photonic Structures (AMPS) computer model developed at Penn State University. The simulated results show that (1) when the front contact barrier height formed at ITO/p interface is above 0.3eV, it leads to an anomalous illuminated I-V characteristics with a bending close to the open circuit point; and (2) the back contact barrier height at n/metal interface plays a similar role to hinder the electron collection and may cause the illuminated I-V curve to bend seriously, when the barrier is above 0.6eV; and (3) with increasing bandgap of p/i interface layer beyond 2.1 eV, the filled factor (FF)decreases seriously, due to the band offset and the band discontinuity at the p/i interface, which also leads to an anomalous illuminated I-V characteristics.
Zhigang Li Xiaojun Ye Mingbo Chen
Shanghai Institute of Space Power-sources No.388 Cangwu Road, Shanghai 200233, China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）