RESEARCH OF THE AMORPHOUS SILICON LAYERS IN HIT SOLAR CELLS

摘要：

The performances of the p-type heavily doped amorphous layer and the intrinsic amorphous layer are optimized for the n-type crystalline silicon based HIT solar cells by controlling the PECVD parameters. The experiments show that the high-conductivity p-type amorphous silicon layer with a comparatively wide optical band gap will be obtained when the gas phase doping concentration (B2H6/SiH4) is set around 1.1％. The substrate temperature and the RF power should be optimized at 180℃ and 100W respectively to obtain a wide optical band gap and a small deposition rate for the intrinsic a-Si layer in the HIT solar cells.

作者: Song Peike Zeng Xiangbin Wang Huijuan Zhang Rui

作者单位: Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, Hubei 430074 P.R.China

会议类型: 国际会议

会议名称: 2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)

会议地点: 北京

会议语种:英文

在线出版日期: 2007-09-18（万方平台首次上网日期，不代表论文的发表时间）