THE EFFECT OF INTERPOSING NANOCRYSTALLINE Si(B) P+ LAYER ON THE PHOTOVOLTAIC PROPERTIES OF a-Si: H TANDEM SOLAR CELLS
Tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. As n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions. The properties of the n/p junction of amorphous silicon (a-Si) were studied. We investigate the effect of interposing a nanocrystalline p+ layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. The crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon ( nc-Si) p+ layer could be modulated by changing the deposition parameters. Current transport in a-Si based n/p (‘‘tunnel) junctions was investigated by current-voltage measurements. The voltage dependence on the resistance (V/J) of the tandem cells was examined to see if n/p junction was ohmic contact. To study the affection of different doping concentration to the properties of the nc-Si p+ layers which varied the properties of the tunnel junctions, three nc-Si p+ film samples were grown, measured and analyzed.
Shi Mingji Wang Zhanguo Zhang Changsha Peng Wenbo Zeng Xiangbo Diao Hongwei Kong Guanglin Liao Xianbo
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）