A NOVEL β-FeSi2 THIN FILM PREPARED BY SPUTTERING FOR SOLAR CELL APPLICATION
Semiconducting iron disilicide (β-FeSi2) films are formed on Si(100) substrate from sputtered Fe/Si multilayer by thermal annealing. 60nm Fe single layer and Fe 0.5 nm/ Si 1.6 nm120 multilayer are first deposited onto high resistant Si(100) substrate and then annealed at 600 ℃ to 900℃ for 2h or from 900℃ to 1000℃ for 10s. The samples are characterized by X-ray diffraction, Rutherford Back- scattering Spectroscopy, Atomic Force Microscope, optical absorption measurement and Van der Pauw method. (202)/(220) oriented β-FeSi2 films are fabricated according to XRD patterns. It is found that there is little redistribution of Fe and Si components in the films. It is also revealed by Atomic Force Microscope that multilayer structure could result in a smooth surface for β-FeSi2 films. Optical absorption spectra demonstrate that the film has a direct band gap of about 0.88 eV at room temperature. The hole concentration in annealed Fe/Si multilayer samples increases with temperature increasing from 300K to 430K.
Honglie Shen Linfeng Lu Lihua Zhou
College of Materials Science and Technology, NUAA 29 Yudao Street Nanjing 210016，China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）