A STUDY ON THE SiN ANTI-REFLECTIVE COATING FOR NANOCRYSTALLINE SILICON SOLAR CELLS
Silicon nitride (SiNx) films were prepared by plasma enhanced chemical vapor deposition (PECVD) using SiH4 and NH3 gases. The refractive indexes of films change from 1.8 to 2.2 with different gas flow ratios. The transmittance was tested by UV-spectrophotometer. The refractive index and thickness of SiNx thin films were calculated. The surface morphology was investigated by Atomic Force Microscope (AFM). The chemical component of SiNx thin films were analyzed by means of Fourier Transform Infrared Spectroscopy (FTIR). According to the SiNx refractive index changing with the processing conditions, multi-coating theory and numerical calculation, the double-layer anti-reflection coating has been designed with SiNx and SiO2 fabricated by PECVD. The study result shows the minimum of the reflection for the double layer is 2.4％ at the wavelength 560 nm. It suggests the double layer anti-reflection coating is good qualified and has lower reflectivity which benefit for the applying as anti-reflective film on nanocrystalline silicon solar cells.
Wu Meiling Zhang Weijia Zhang Xinqiang Liu Hao Jia Shiliang Qiu Nan
Center of Condensed Matter and Materials Physics & Chemistry, Beihang University, Beijing, 100083, China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）