MICROCRYSTALLINE SILICON MATERIALS AND SOLAR CELLS WITH HIGH DEPOSITION RATE
Although similar deposition rate (2.0nm/s) and defect absorption (α0.8eV =2.5cm-1) for intrinsic μc-Si:H films can be obtained at different total gas flow rate, the solar cell performance, which consists of the above intrinsic μc-Si:H as absorb layers, was obviously different. From the results of quantum efficiency (QE), dark J-V characteristic and Raman spectra, it was found that the amorphous silicon incubation layer is the main reason for the difference of the two solar cells. Increased the total gas flow rate can reduce the thickness of the amorphous silicon incubation layer, which can enhanced the QE response in the long wavelength and increase the short circuit current. These results demonstrate that the amorphous silicon incubation layer was a key factor for the fabrication of high efficiency microcrystalline silicon solar cell with high growth rate.
Xiaoyan Han Xinhua Geng Xiaodan Zhang Guofu Hou Qunchao Guo Yujie Yuan Changchun Wei Jian Sun Junming Xue Ying Zhao
Institute of photoelectronics thin film devices and technique of Nankai University.Key Laboratory of photoelectronics thin film devices and technique of Tianjin.Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Educatio
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）