STUDY OF P-μc-Si1-xGex :H THIN FILM BY VHF-PECVD

摘要：

In this paper, a series of boron doped microcrystalline hydrogenated silicon-germanium (P-μc-Si1-xGex:H) was deposited by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) at different GeF4 concentration (GC=GeF4/GeF4+SiH4). The Ge fraction x was measured by XRF and the conductivity was measured by the coplanar conductivity measurement. The results showed that, with the increasing of GC, the Ge fraction x increases slowly first, then increases linearly and the dark conductivity increases first, then decreases. The results of Raman measurement evidently showed that the crystalline volume fraction of p-type microcrystalline silicon germanium increased small and then decreased as the GC increased. When the GC is 4％, p-μc-Si1-xGex:H material with high conductivity, low activation energy (σ＝ 1.68S/cm,Eg＝0.047ev ) and high crystalline volume fraction at the thickness of 72nm was achieved. The experimental results were discussed in detail.

作者: Z.R.Shang J.J.Zhang L.P.Zhang Z.X.Hu J.M.Xue Y.Zhao X.H.Geng

会议类型: 国际会议

会议名称: 2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)

会议地点: 北京

会议语种:英文

在线出版日期: 2007-09-18（万方平台首次上网日期，不代表论文的发表时间）