ELECTRICAL PROPERTIES OF DOPED SnS THIN FILMS PREPARED BY VACUUM EVAPORATION

摘要：

Tin sulfide (SnS) has received much attention because of its high absorption coefficient, suitable band-gap and little toxicity. In this paper, doped-SnS thin films were fabricated by vacuum evaporation. Sb, Sb2O3, Se, Te, In, In2O3, Se and In2O3 were used as dopant sources. The thickness and conductance of various doped-SnS thin films were measured, and then the resistivities and the ratio of photo-conductivity to dark-conductivity (Gphoto/Gdark) of these films were calculated. From the experimental results, Sb is the best dopant source. The resistivity of Sb doped-SnS thin film is reduced by four orders of magnitude and the value of Gphoto/Gdark is double. In addition, the influence of Sb doping content on the electrical properties of doped-SnS thin films was also investigated, and the optimum doping content of Sb is 1.3％~1.5％ in weight.

作者: Guo Yuying Shi Weimin Wei Guangpu

作者单位: School of Materials Science and Engineering, Shanghai University Shanghai 200072

会议类型: 国际会议

会议名称: 2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)

会议地点: 北京

会议语种:英文

在线出版日期: 2007-09-18（万方平台首次上网日期，不代表论文的发表时间）