THE INTERFACE RECOMBINATION CURRENT OF THE CdS/CdTe HETEROJUNCTION SOLAR CELL
The recombination current and its relation with voltage and density of interface states of the CdS/CdTe solar cell are discussed. Interface state is the result of lattice mismatch of the two materials used. Here, we regard interface states as impurity lever. In order to find out its influence to the efficiency of solar cell, we use S-R-H model to calculate interface recombination current of the cell on illumination conditions. At the same time, interface recombination current density is compared with photo-generated current density and we find that it is the main loss for thin cell. Also, we discuss relation between interface recombination current and capture cross-section and other factors, we find that interface recombination current is significant when the photo-voltage changes from 0.5V to 0.7V. If photo-voltage is less than 0.5V, interface recombination current could be neglected. At last, we analyze the way to reduce interface recombination current.
Zhang Lei Wu Wei Li Min, Zhao Zhanxia Zhang Yuhong Ma Z.Q.
SHU-SOLARE’s R&D LAB,Dept.of physics,shanghai University P R.China Shanghai 200444, China
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）