PERFORMANCE MEASUREMENT TECHNOLOGIES FOR HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELLS
Accurate measurements of the I-V curves of crystalline silicon c-Si cells and modules are discussed. Special attention is paid to the recent high-efficiency devices. The effect of the sweep speed and direction on the I-V measurement of state-of-the-art high-efficiency c-Si cells and modules such as HIT and backside-contact technologies is investigated, in order to clarify the precise characterization techniques for those devices. The Pmax and FF of these devices with conversion efficiencies of ~20％ show significant dependence on the sweep conditions by 5-10％ or more, when the sweep speed is less than 50-100 msec.. Their I-V measurements should be carried out in the conditions where the result is independent on both the sweep direction and speed.
Yoshihiro HISHIKAWA
National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Photovoltaics Central 2, Umezono 1-1-1, Tsukuba, Ibaraki, 305-8568 Japan
国际会议
2007世界太阳能大会(Proceedings of ISES Solar World Congress 2007)
北京
英文
2007-09-18（万方平台首次上网日期，不代表论文的发表时间）