Fabrication of La1-xMnO3+δ (x=0, 0.15) thin films on Si substrates via chemical solution deposition (CSD)
La1-xMnO3+δ(x=0,0.15) thin films are fabricated successfully on single crystal Si (h00) substrates using chemical solution deposition method (CSD), LaMnO3+δfilms with (h00) orientation and La0.85MnO3+|δfilms with random orientation. The results show that temperature can obviously affect the orientation and crystallization of LaMnO3+δfilms. Moreover, it is found there exist an insulator-metal transition in the LaMnO3+δfilms, which can be attributed to the oxygen excess. La-deficient can improve crystallization quality and the microstructure of the film. For the La0.85MnO3+|δfilms, show an obvious low field magnetoresistance (LFMR), which is beneficial to practice application.
Manganites Magnetoresistance Film Chemical solution deposition
Shengman LIU Bin Gao Yuping SUN Jingchang ZHANG Yan LI Xuebin ZHU Tingtai WANG Jinhe TAO Linfeng YANG Ming.ZHANG Yuguang ZHANG
College of Science, Zhongyuan University of Technology, Zhengzhou 450007,PR China;Key Laboratory of College of Science, Zhongyuan University of Technology, Zhengzhou 450007,PR China Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Institute of materials science and engineering, Shijiazhuang University of Economics, Shijiazhuang 0
国际会议
郑州
英文
2007-10-23(万方平台首次上网日期,不代表论文的发表时间)