Advantages and Future Development of Aluminium Implanted Power Semiconductor Device Products.
The emergence of aluminium implant technology (i2) at Dynex Semiconductor for the manufacture of power bipolar semiconductor devices has been well documented. This paper addresses a variety of applications benefits to be gained by use of this technology. In particular,meeting the demand for increasing HVDC switching power, improved converter diode manufacturability, very high voltage/current capability for pulse power, and efficient parameter matching for large area thyristor parallel sharing are discussed. Bonding devices and 150mm-wafer suited to provide state of art power devices well into the foreseeable future.
S.Coley, A.D.Millington A.T.Plumpton
Dynex Semiconductor Ltd, Lincoln, UK
国际会议
PCIM China 2006(International Conference Power Electronics)(2006年中国电力电子技术国际会议)
上海
英文
35-39
2006-03-21（万方平台首次上网日期，不代表论文的发表时间）