SONIC -A New Generation of Fast Recovery Diodes

摘要：

In this paper, new families of planar SONIC soft recovery diodes in the 600V to 1800V voltage range with different current ratings are introduced. The fast and soft recovery diodes with tail current were developed using a combination of deep diffused phosphorous wafers from the backside of a wafer and controlled axial lifetime killers. The proposed diodes give stable performance throughout its operating temperature range and maintain negligible forward voltage drop with respect to temperature. The SONIC diodes are designed for high frequency applications where rugged switching performance is required. The switching losses at 25℃ to 125℃ are compared between SONIC and standard Fast Recovery Epitaxial Diode (FRED) using platinum or gold as lifetime killers.

作者: J.V.Subhas chandra Bose Iain Imrie Holger Ostmann Peter Ingram

作者单位: IXYS Semiconductor GmbH, Edisonstrasse 15, D-68623 Lampertheim, Germany

会议类型: 国际会议

会议名称: PCIM China 2006(International Conference Power Electronics)(2006年中国电力电子技术国际会议)

会议地点: 上海

会议语种:英文

页码: 46-51

在线出版日期: 2006-03-21（万方平台首次上网日期，不代表论文的发表时间）