Solutions for improved dynamic ruggedness of high voltage freewheeling diodes
The dynamic ruggedness is one of the key requirements for high voltage freewheeling diodes. To improve the dynamic ruggedness of the power diodes,many innovations have been practiced in the past. In this paper solutions such as axial carrier lifetime profile,control of the p emitter efficiency and diodes with gaussian buffer structures are evaluated with numerical isothermal simulation for a 3.3kV design in respect to their influence on the static and dynamic behaviour as well as the dynamic ruggedness.Requirements for a new solution are derived.
high voltage freewheeling diode reverse recovery dynamic ruggedness device simulation
Min Chen Josef Lutz Hans-Peter Felsl Hans-Joachim Schulze
Chemnitz University of Technology, Chemnitz, Germany Infineon Technologies AG, Munich, Germany
国际会议
PCIM China 2006(International Conference Power Electronics)(2006年中国电力电子技术国际会议)
上海
英文
198-202
2006-03-21（万方平台首次上网日期，不代表论文的发表时间）