Silicon Doping Dependence of n-Type Al0.5Ga0.5N Layers Grown by Metalorganic Chemical Vapor Deposition

摘要：

The electrical, structure and optical properties of Si-doped Al0.5Ga0.5N epilayers with a thickness of about 0.5 μm grown on sapphire substrates using an AlN buffer by metalorganic chemical vapor deposition were reported. Hall-effect measurements showed that n-type Al0.5Ga0.5N was achieved achieved with an electron concentration of 1.2 × 1019 cm-3 and mobility of 12 cm2· Vs- 1 at room temperature. The electron concentration increases with an increase of Si doping level. Lattice constant of c and Raman shift of Si-doped Al0.5Ga0.5N epilayers with various SiH4 flow rates was studied by Xray diffraction (XRD) and Raman scattering spectrum. With increasing SiH4 flow rate, the decrease of the lattice constant of c and the frequency of E2 phonon implies gradual relaxation of the stress in the epilayers.

关键词： AlGaN Si doping MOCVD

作者: Li Liang Han Ping Gong Haimei Zheng Youdou Zhang Rong Xie Zili Zhang Yu Xiu Xiangqian Liu Bin Zhou Jianjun Chen Lin Yu Huiqiang

作者单位: Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing Univers Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing Univers

会议类型: 国际会议

会议名称: 2006稀土玻璃陶瓷国际学术年会

会议地点: 海口

会议语种:英文

页码: 349-352

在线出版日期: 2006-11-13（万方平台首次上网日期，不代表论文的发表时间）