Optical Anisotropic Properties of m-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

摘要：

Spontaneous and piezoelectric polarization could lower the efficiency of GaN-based light-emitting diodes. In order to eliminate or reduce this undesirable effect, m-plane GaN film was prepared by metalorganic chemical vapor deposition (MOCVD) on LiAlO2(100) substrate with a GaN buffer layer. Since the c axis of the m-plane GaN lays in the grown plane, the breakage of in-plane symmetry gave rise to an optical anisotropy, which was revealed by a difference in refractive indexes of E-field parallel and perpendicular to the c axis of the m-plane GaN measured by polarized reflection measurement. In addition, in-plane strain anisotropy due to the lattice mismatch between the GaN film and the LiAlO2 substrate changed the Electronic Band Structure (EBS). The change of EBS also led to an in-plane optical anisotropy. Polarized absorption and Photoluminescence(PL) measurements showed a split in energy of 32 meV for optical absorption edge and 37 meV for PL peak energy respectively.

关键词： GaN electronic band structure anisotropy split polarization

作者: Kong Jieying Zhang Rong Zhang Yong Liu Chengxiang Xie Zili Liu Bin Zhu Shining Min Naiben Zheng Youdou

作者单位: Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, Ch National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

会议类型: 国际会议

会议名称: 2006稀土玻璃陶瓷国际学术年会

会议地点: 海口

会议语种:英文

页码: 356-359

在线出版日期: 2006-11-13（万方平台首次上网日期，不代表论文的发表时间）