45nm Node p+ USJ Formation With High Dopant Activation And Low Damage

摘要：

We investigated various p+ extension implantation dopant species (B, BF2, B10H14 & B18H22) and annealing techniques (spike, flash, laser and SPE) to achieve high dopant activation low damage ultra shallow junctions (USJ) 15-20nm deep for 45nm node applications. New USJ metrology techniques were investigated to determine: 1) surface dopant activation level and 2) junction quality (residual implant damage) using contact and non-contact full wafer metrology methods. We discovered that using molecular dopant species (B10H14 & B18H22) either high temperature (flash or laser) annealing or low temperature SPE annealing are very promising for the 45nm node process integration with SiON or high-k Hf-based dielectric gate stack structures because of their wide temperature range for dopant activation without diffusion.

作者: John Borland Steve McCoy Julien Venturini MichaelCurrent Vladimir Faifer Robert Hillard Mark Benjamin Tom Walker Andrzej Buczkowski Zhiqiang Li James Chen Seiichi Shishiguchi Akira Mineji Wade Krull Dale Jacobson MasayasuTanjyo Wilfried Lerch Silke Paul Jeff Gelpey

作者单位: J.O.B Technologies Mattson Technology SopraOptical Solutions Frontier Semiconductor Solid State Measurements Accent Optical Technologies FourDimensions NEC Electronics Corp. SemEquip Nissin Ion Equipment

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）