Control of both number and position of dopant atoms in semiconductors by single ion implantation
Continued challenge for higher-performance semiconductor device requires the controlled doping of single-dopant atom to control the electrical properties. Here we report the fabrication of semiconductors with both dopant number and position controlled by using a one-by-one doping technique, which we call single-ion implantation (SII). This technique enables us to implant dopant ions one-by-one into a fine semiconductor region until the necessary number is reached. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping. We also find that the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopant atoms. The ordered dopant arrays may increase the prospects of fluctuation-controlled advanced silicon transistors.
Takahiro Shinada Tomonori Kurosawa Takahiro Kobayashi Hideki Nakayama Iwao Ohdomari
Consolidated Research Institute for Advanced Science and Medical Care, Waseda University School of Science and Engineering, Waseda University 513 Wasedatsurumakicho, Shinjuku ward, Tokyo 16
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）