Precision Implant Requirements for SDE Junction Formation in sub-65 nm CMOS DevicesCMOS Devices

摘要：

Sub-65 nm devices are becoming increasingly sensitive to variations of ion beam angular properties. Beam divergence and beam steering effects in Source/Drain Extension (SDE) implants could significantly shift device characteristics. In this paper we review the implant precision requirements for Source/Drain Extension (SDE) formation for sub-65nm node devices. TCAD simulation was used to analyze the effects of beam emittance and steering errors for an on-axis (0 o ) SDE implant. In addition, the effect of energy contamination introduced along with decelerated low energy ions is also discussed. Response of device electrical characteristics to variation of beam angle properties is quantified and beam angle control requirements for state-of-the-art ultra-low energy implanters formulated.

作者: Yuri Erokhin Jinning Liu

作者单位: Varian Semiconductor Equipment Associates, Gloucester, MA, U.S.A.

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）