Minimizing Pattern Dependency in Millisecond Annealing

摘要：

Millisecond annealing is a key enabling technology for creating the ultra-shallow junctions of the 65nm node and beyond. The very short thermal diffusion distances inherent in millisecond annealing exacerbate larger scale pattern density differences and can result in corresponding differences in annealing temperatures. This paper considers the three different methods of achieving millisecond annealing times and the various ways that pattern effects can be minimized in each case. These include opaque coatings, dummification and careful selection of the wavelength, incidence angle and polarization of the radiation used for annealing. Each method has its own set of advantages and disadvantages and these are enumerated. The article concludes with a short comparison of the results obtained with three commercially available, millisecond annealing systems.

作者: Lucia M.Feng Yun Wang David A.Markle

作者单位: Ultratech, Inc., 3050 Zanker Road, San Jose, CA 95134, USA

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）