High quality ion implanter; EXCEED3000AH-Nx for 45nm beyond I/I process<Beam Size and Angle>

摘要：

For the 45nm beyond advanced LSI mass-production, accurate dose and beam angle control for the implantation process is highly required. For the purpose the ion beam size and angle monitor was developed and installed in EXCEED3000AH new version medium current ion implanter.. The measured results shows the beam size and angle increased at the beam energy decreased, especially for the Y direction beam divergence is severe. As the solution, further development items are present.

作者: Masayasu Tanjyo Takatoshi Yamashita Tsutomu Nagayama Nariaki Hamamoto Sei Umisedo Satoru Yuasa Masao Naito Nobuo Nagai Shigeki Sakai Tadashi Ikejiri Kohei Tanaka Yuji Koga Tomoaki Kobayashi Takao Matsumoto Makoto Nakaya Yasuhiro Kibi

作者单位: Nissin Ion Equipment Co., Ltd.575, Kuze-tonoshiro-cho, Minami-ku, Kyoto 601-8205, Japan

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）