Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

摘要：

The Kinetic Monte Carlo (KMC) method has been the applicable method for the investigation on annealing process. In this paper, the simulation on both enhanced diffusion and inactivation of B is presented. The inactivation and clustering of B implanted at 0.5keV and annealed at 900℃～1200℃ are correctly simulated. The model can also correctly simulate the enhanced diffusion of B introduced by ultra-low energy implantation or pre-doping. Analysis on the evolution of B-Si clusters in annealing is performed.

作者: Min Yu Hideki Oka Xiao Zhang Liming Ren Huihui Ji Kai Zhan Ru Huang Xing Zhang Yangyuan Wang Jinyu Zhang

作者单位: Institute of Microelectronics, Peking University, China 100871 Fujitsu Laboratories LTD, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan Fujitsu R&D Center Co.LTD, Room B1003, Eagle Run Plaza No.26 Xiaoyun Road Chaoyang District Beijing,

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）