Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation
A molecular dynamic method for cluster implantation simulation which is a potential technology for shallow junction formation in integrated circuits manufacture, aimed at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters including H atoms are described by the model. A potential function taking a form of combining the ZBL and the SW potentials is applied to model interaction among the atoms in the boron cluster. Simulations of B monomer, B10H14 and B18H22 are performed. The distributions of both B and H in monomer and cluster implantation are verified by SIMS data. It is notable that with the cluster model presented, the simulation can reproduce the difference of monomer and cluster implantation very well.
Li Yuan Hideki Oka Wei Li Min Yu Huihui Ji Liming Ren Ru Huang Xing Zhang Yangyuan Wang Jinyu Zhang
Institute of Microelectronics, Peking University, China 100871 Fujitsu Laboratories LTD, 10-1 Morinosato-Wakamiya, Atsugi Fujitsu R&D Center Co.LTD, Room B1003, Eagle Run PlazaNo.26 Xiaoyun Road Chaoyang District Beijing,
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）