Ultra Shallow Junction and Super Steep Halo Formation Using Carbon Co-implantation for 65nm High Performance CMOS Devices

摘要：

In this paper, we report the effects of carbon co-implantation for the reduction of transient enhanced diffusion (TED) of both p-type SD-extension and halo dopants using a conventional spike annealing process. By optimizing implantation conditions, p-type USJ for pMOSFETs and an extremely steep halo profile for nMOSFETs are successfully obtained for the suppression of SCE without drive current degradation.

作者: Akira Mineji Seiichi Shishiguchi

作者单位: NEC Electronics Corporation, Process Technology Division Shimokuzawa 1120, Sagamihara, Kanagawa 229-1198, Japan

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）