Direct Observation of 2-D Dopant Profiles of MOSFETsActivated by Millisecond Anneal

摘要：

We have directly measured two-dimensional (2-D) dopant profiles of millisecond-annealed p-MOSFETs by scanning spreading resistance microscopy (SSRM) for the first time. The measured 2-D dopant profiles agree with simulated dopant profiles obtained by using calibrated TCAD tools. Three-dimensional (3-D) SSRM simulation reveals that the current SSRM probe-contact radius has enough spatial resolution. For further scaling, however, smaller radius of probe is required.

作者: K.Adachi H.Ishiuchi K.Ohuchi N.Aoki H.Tanimoto H.Tsujii P.Eyben D.Vanhaeren W.Vandervorst K.Ishimaru

作者单位: SoC Research & Development Center, Semiconductor Company, Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama, Kanagawa 235-8522 Japan

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）